Specification	SQJ412EP-T2_GE3

Current - Continuous Drain (Id) (Tc)	32 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	120 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	5950 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	83 W
Qualification	AEC-Q101
Rds On (Max)	4.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SQJ412 Series

Part	Package Name	FET Type	Power Dissipation (Max)	Mounting Type	Package / Case	Technology	Vgs (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Qualification	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Grade	Vgs(th) (Max)	Gate Charge (Max)
Vishay Dale SQJ412EP-T2_GE3	PowerPAK® SO-8	N-Channel	83 W	Surface Mount	PowerPAK® SO-8	MOSFET (Metal Oxide)	20 V	4.1 mOhm	40 V	AEC-Q101	-55 °C	175 °C	32 A	5950 pF	10 V	4.5 V	Automotive	2.5 V	120 nC

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