| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Thyristors (SCR) and AC switches | 3 | 1 | The TN1515-600B is a 15 A thyristor SCR housed in DPAK package. It fits any high voltage application that requires a high power density and compact housing design. | |
| Semiconductors - Discretes | 10 | 1 | Designed with high immunity switching to external surges, the device offers robust switching up to its 150 °C maximum Tj.
The combination of noise immunity and low gate triggering current allows to design strong and compact control circuit. | |
| Transistors/Thyristors | 4 | 1 | Designed with high immunity switching to external surges, this device offers robust switching up to its 150°C maximum Tj.
The combination of noise immunity and low gate triggering current allows to design strong and compact control circuit. | |
| Semiconductors - Discretes | 4 | 1 | Designed with high immunity switching to external surges, the device offers robust switching up to its 150 °C maximum Tj.
The combination of noise immunity and low gate triggering current allows to design strong and compact control circuit. | |
| Thyristors (SCR) and AC switches | 2 | 1 | Thanks to its operating junction temperature up to 150°C, the TN1605H-8B offers high thermal performance operation up to 16 A rms in a DPAK package. Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate triggering current (maximum IGT = 6 mA) and its turn-on current rise (dI/dt =... Read More | |
| SCRs | 5 | 1 | Thanks to its operating junction temperature up to 150°C, the TN1605H-8G offers high thermal performance operation up to 16 A rms in a D²PAK SMD package. Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate triggering current (maximum IGT= 8 mA) and its turn-on current rise (dI/dt =... Read More | |
| Semiconductors - Discretes | 3 | 1 | Thanks to its operating junction temperature up to 150°C, the TN1605H-8I offers high thermal performance operation up to 16 A rms in a TO-220AB insulated package. Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate triggering current (maximum IGT= 8 mA) and its turn-on current rise (dI/dt =... Read More | |
| Semiconductors - Discretes | 2 | 1 | Thanks to its operating junction temperature up to 150°C, the TN1605H-8T offers high thermal performance operation up to 16 A rms in a TO-220AB package. Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate triggering current (maximum IGT= 8 mA) and its turn-on current rise (dI/dt = 100... Read More | |
| Semiconductors - Discretes | 4 | 1 | Thanks to its operating junction temperature up to 150°C, the TN1610H-6I offers high thermal performance operation up to 16 A rms. Its trade-off noise immunity (dV/dt = 1000 V/μs) versus its gate triggering current (IGT= 10 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design robust... Read More | |
| Semiconductors - Discretes | 4 | 1 | Thanks to its operating junction temperature up to 150°C, the TN1610H-6I offers high thermal performance operation up to 16 A rms. Its trade-off noise immunity (dV/dt = 1000 V/μs) versus its gate triggering current (IGT= 10 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design robust... Read More | |