| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTTH1212 | Semiconductors - Discretes | 3 | 1 | |
| Discrete Semiconductor Products | 16 | 1 | The STTH12R06, which is using ST Turbo 2 600V technology, is specially suited as boost diode in continuous mode power factor corrections and hard switching conditions.
This device is also intended for use as a free wheeling diode in power supplies and other power switching applications. | |
| Fast & Ultrafast Recovery Rectifiers | 2 | 1 | ST's STTH12S06 is a state of the art Ultrafast recovery diode. By the use of 600 V Pt doping Planar technology, this diode will outperform the power factor correction circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH12S06, reduces significantly the switching power losses of... Read More | |
| Ultrafast Tandem | 4 | 1 | This device is part of ST's second generation of 600 V tandem diodes. It has ultralow switching-losses with a minimized QRR(6.5 nC) that makes it perfect for use in circuits working in hard-switching mode. In particular the VF/QRRtrade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in... Read More | |
STMicroelectronicsSTTH1302 | Rectifiers | 2 | 8 | |
| Diodes/Fast Recovery / High Efficiency Diodes | 10 | 1 | The STTH15RQ06-Y has been developed to be used in application requiring a high-voltage secondary rectification for LLC Full Bridge topology.
It is also suited for use in switching power supplies and automotive applications, industrial applications, as rectification, freewheeling and clamping diode. | |
| Single Diodes | 6 | 1 | The STTH1502 uses ST's new 200V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits.
Packaged in TO-220AC, TO-220FPAC, and TO-220 Ins, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. | |
| Diodes | 3 | 1 | The TURBOSWITCH "H" is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH "H" family drastically cuts losses in the associated MOSFET when run at high dIF/dt. | |
| Semiconductors - Discretes | 3 | 1 | The TURBOSWITCH "H" is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH "H" family drastically cuts losses in the associated MOSFET when run at high dIF/dt. | |
| Diodes | 3 | 1 | The TURBOSWITCH "H" is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH "H" family drastically cuts losses in the associated MOSFET when run at high dIF/dt. | |