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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTSR2 | PMIC | 2 | 8 | |
| Evaluation tool software | 1 | 1 | The STSW-M07SPI-ADIS is the Graphical User Interface (GUI) dedicated to set and control the 12V M0-7 SPI kit VIP-M07SPI-ADIS able to create a solution for a specific 12V SPI BCM system.
The STSW-M07SPI-ADIS has been developed by using Visual Express for Desktop 2013 | |
STMicroelectronicsSTT13 | Transistors | 1 | 8 | |
STMicroelectronicsSTT2P | Transistors | 1 | 8 | |
STMicroelectronicsSTT3P | FETs, MOSFETs | 1 | 8 | |
STMicroelectronicsSTT4P | FETs, MOSFETs | 1 | 8 | |
STMicroelectronicsSTT4P3LLH6P-Channel 30 V, 0.048 Ohm typ., 4 A STripFET H6 Power MOSFET in a SOT23-6L package | Discretes | 3 | 1 | This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STMicroelectronicsSTT5N2 | FETs, MOSFETs | 1 | 6 | |
STMicroelectronicsSTT6N3LLH6N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package | Discretes | 3 | 1 | This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. |
| Bipolar (BJT) | 2 | 1 | The device is manufactured in low voltage PNP Planar Technology with "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. | |