| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Discrete Semiconductor Products | 3 | 1 | The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns... Read More | |
| Semiconductors - Discretes | 11 | 1 | This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at... Read More | |
STMicroelectronicsSTPSC806 | Diodes Transistors And Thyristors | 3 | 1 | |
| Silicon Carbide Diodes | 3 | 1 | The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing... Read More | |
| Discretes | 9 | 1 | This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at... Read More | |
| Diodes | 6 | 1 | The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns... Read More | |
| Silicon Carbide Diodes | 3 | 1 | This 8 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at... Read More | |
| Semiconductors - Discretes | 3 | 1 | The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns... Read More | |
| Semiconductors - Discretes | 11 | 1 | This 1 A, 100 V rectifier is based on ST trench technology that achieves the best-in-class VF/IR trade-off for a given silicon surface. Integrated in flat and space-saving packages, this STPST1H100-Y trench, and automotive-graded device is intended to be used in high frequency miniature switched mode power supplies such as... Read More | |
| Automotive-grade diodes | 5 | 1 | This 10 A, 100 V rectifier is based on ST trench technology that achieves the best-in-class VF/IR trade-off for a given silicon surface. Integrated in a DPAK package, this STPST10H100SB trench rectifier is intended to be used in high frequency miniature switched mode power supplies. It is also an ideal... Read More | |