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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Diodes and rectifiers | 4 | 1 | The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns... Read More | |
| Diodes Transistors And Thyristors | 19 | 1 | The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing... Read More | |
| Diodes Transistors And Thyristors | 11 | 1 | The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing... Read More | |
| Rectifiers | 2 | 1 | The STPSC20065C is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are... Read More | |
| Diodes and rectifiers | 4 | 1 | The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns... Read More | |
| Rectifiers | 3 | 1 | The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is... Read More | |
STMicroelectronicsSTPSC20G12-YAutomotive 1200 V, 20A power Schottky High Surge silicon carbide diode | Diodes and rectifiers | 3 | 1 | The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is... Read More |
| Diodes and rectifiers | 4 | 1 | The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns... Read More | |
STMicroelectronicsSTPSC20H065C-YAutomotive 650 V, 20 A High Surge Silicon Carbide Power Schottky Diode | Semiconductors - Discretes | 6 | 1 | The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns... Read More |
STMicroelectronicsSTPSC20H065CWLYAutomotive 650V, 20A High Surge Silicon Carbide Power Schottky Diode | SiC Diodes | 2 | 1 | The STPSC20H065CWLY is an ultra-high-performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible.... Read More |