| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Discrete Semiconductor Products | 4 | 1 | This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from... Read More | |
| FETs | 2 | 1 | VP2110 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device... Read More | |
| Semiconductors - ICs | 7 | 1 | VP2206 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device... Read More | |
| Semiconductors - ICs | 7 | 1 | This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is... Read More | |
| Transistors | 4 | 1 | This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is... Read More | |
| Oscillators And Crystals | 47 | 1 | The VPC1 Crystal Oscillator (XO) is a quartz stabilized square wave generator with a CMOS output. The VPC1 utilizes a high performance, low frequency quartz resonator followed by a custom ASIC to synthesize the output frequency. | |
| Discretes | 5 | 1 | The VRF family of RF MOSFETs includes improved replacements for industry-standard RF transistors. They provide improved ruggedness by increasing the Bvdss over 30 percent from the industry-standard 125V to 170V minimum. Low-cost flangeless packages are another improvement that shows Microchip’s dedication to optimizing performance, reducing cost and improving reliability. We... Read More | |
| Diodes Transistors And Thyristors | 6 | 1 | The VRF family of RF MOSFETs includes improved replacements for industry-standard RF transistors. They provide improved ruggedness by increasing the Bvdss over 30 percent from the industry-standard 125V to 170V minimum. Low-cost flangeless packages are another improvement that shows Microchip’s dedication to optimizing performance, reducing cost and improving reliability. We... Read More | |
| Fet Transistors | 10 | 1 | The VRF family of RF MOSFETs includes improved replacements for industry-standard RF transistors. They provide improved ruggedness by increasing the Bvdss over 30 percent from the industry-standard 125V to 170V minimum. Low-cost flangeless packages are another improvement that shows Microchip’s dedication to optimizing performance, reducing cost and improving reliability. We... Read More | |
Microchip TechnologyVRF154 | Semiconductors - ICs | 4 | 1 | |