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Microchip Technology
Series | Category | # Parts | Status | Description |
---|---|---|---|---|
Series | Category | # Parts | Status | Description |
---|---|---|---|---|
Discretes | 11 | 1 | This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is... Read More | |
Microchip TechnologyTP2424 | Diodes Transistors And Thyristors | 2 | 4 | |
1 | 1 | This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device... Read More | ||
Single FETs, MOSFETs | 3 | 1 | This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device... Read More | |
Microchip TechnologyTP2510 | Semiconductors - Discretes | 2 | 1 | |
Single FETs, MOSFETs | 2 | 1 | This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device... Read More | |
Microchip TechnologyTP2522 | Discrete Semiconductor Products | 2 | 1 | |
Semiconductors - ICs | 2 | 1 | This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is... Read More | |
Discretes | 9 | 1 | This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is... Read More | |
Single FETs, MOSFETs | 2 | 1 | This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is... Read More |