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IXYS

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Series	Category	# Parts	Status	Description

IXYSDSEE6	Rectifiers	1	1
IXYSDSEE8	Discrete Semiconductor Products	2	1
IXYSDSEI12	Rectifiers	4	1
IXYSDSEI120	Rectifiers	1	1
IXYSDSEI19	Rectifiers	2	1
IXYSDSEI20	Discrete Semiconductor Products	1	1
IXYSDSEI25	Rectifiers	1	1
IXYSDSEI2X	Arrays	4	8
IXYSDSEI2X101	Arrays	3	1
IXYSDSEI2X121	Discrete Semiconductor Products	1	1

Standalone parts(722)

...

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Speed	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Gate Charge	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Pulsed (Icm)	Test Condition	Switching Energy	Vce(on) (Max) @ Vge, Ic	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Current - On State (It (AV)) (Max)	Number of SCRs, Diodes	Current - Hold (Ih) (Max) [Max]	Voltage - Gate Trigger (Vgt) (Max) [Max]	Current - Gate Trigger (Igt) (Max) [Max] [x]	Structure [custom]	Structure [custom]	Structure [custom]	Current - On State (It (RMS)) (Max) [Max]	Voltage - Off State	Current - Non Rep. Surge 50, 60Hz (Itsm) [Max]	Current - Non Rep. Surge 50, 60Hz (Itsm) [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	IGBT Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Diode Configuration	Current - Average Rectified (Io) (per Diode)
IXYS IXFP8N50PM	42 W	20 nC	10 V	TO-220-3	-55 °C	150 °C	Through Hole	500 V	5.5 V	1050 pF	TO-220-3	N-Channel	MOSFET (Metal Oxide)	800 mOhm	30 V	4.4 A
IXYS DSEP60-06AZ-TUB				D3PAK (2 Leads + Tab) TO-268-3 TO-268AA			Surface Mount				TO-268AA (D3Pak-HV)		Standard				600 V	2.04 V	175 ░C	-55 C	60 A	200 mA 500 ns	650 µA	35 ns	67 pF
IXYS IXYH50N170C				TO-247-3	-55 °C	175 ░C	Through Hole				TO-247 (IXYH)													44 ns		260 nC	178 A	1500 W	20 ns 180 ns	1700 V	460 A	1 Ohm 15 V 50 A 850 V	5.6 mJ 8.7 mJ	3.7 V
IXYS IXFE180N10	500 W		10 V	SOT-227-4 miniBLOC	-55 °C	150 °C	Chassis Mount	100 V	4 V	9100 pF	SOT-227B	N-Channel	MOSFET (Metal Oxide)	8 mOhm	20 V	176 A																			360 nC
IXYS IXTY2N60P			10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	Surface Mount	600 V	5 V	240 pF	TO-252AA	N-Channel	MOSFET (Metal Oxide)	5.1 Ohm	30 V	2 A																			7 nC	55 W
IXYS VVZ175-14IO7				PWS-E2	-40 °C	125 ¯C	Chassis Mount																														167 A	3 Diodes	200 mA	1.5 V	100 mA	Bridge	3-Phase	SCRs/Diodes	89 A	1.4 kV	1600 A	1500 A
IXYS IXST30N60B2D1				D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	-55 °C	150 °C	Surface Mount				TO-268AA													30 ns		50 nC		250 W			90 A	5 Ohm 15 V 24 A 400 V	550 µJ	2.5 V															600 V	PT	30 ns	130 ns
IXYS DSSK80-006B				TO-247-3			Through Hole				TO-247AD		Schottky				60 V		150 °C	-55 °C		200 mA 500 ns	20 mA																														1 Pair Common Cathode	40 A
IXYS DPG15I200PA				TO-220-2			Through Hole				TO-220AC		Standard				200 V	1.26 V	175 ░C	-55 C	15 A	200 mA 500 ns	1 µA	35 ns
IXYS IXGH32N90B2D1				TO-247-3	-55 °C	150 °C	Through Hole				TO-247AD													190 ns		89 nC	64 A	300 W		900 V	200 A	5 Ohm 15 V 32 A 720 V	2.2 mJ	2.7 V																PT	20 ns	260 ns