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IXYS

Series List(1626)

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SeriesCategory# PartsStatusDescription

Standalone parts(722)

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PartPower Dissipation (Max)Gate Charge (Qg) (Max) @ Vgs [x]Drive Voltage (Max Rds On, Min Rds On)Package / CaseOperating Temperature [Min]Operating Temperature [Max]Mounting TypeDrain to Source Voltage (Vdss)Vgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsSupplier Device PackageFET TypeTechnologyRds On (Max) @ Id, VgsVgs (Max)Current - Continuous Drain (Id) @ 25°CVoltage - DC Reverse (Vr) (Max) [Max]Voltage - Forward (Vf) (Max) @ IfOperating Temperature - Junction [Max]Operating Temperature - Junction [Min]Current - Average Rectified (Io)SpeedCurrent - Reverse Leakage @ VrReverse Recovery Time (trr)Capacitance @ Vr, FGate ChargeCurrent - Collector (Ic) (Max) [Max]Power - Max [Max]Td (on/off) @ 25°CVoltage - Collector Emitter Breakdown (Max)Current - Collector Pulsed (Icm)Test ConditionSwitching EnergyVce(on) (Max) @ Vge, IcGate Charge (Qg) (Max) @ VgsPower Dissipation (Max) [Max]Current - On State (It (AV)) (Max)Number of SCRs, DiodesCurrent - Hold (Ih) (Max) [Max]Voltage - Gate Trigger (Vgt) (Max) [Max]Current - Gate Trigger (Igt) (Max) [Max] [x]Structure [custom]Structure [custom]Structure [custom]Current - On State (It (RMS)) (Max) [Max]Voltage - Off StateCurrent - Non Rep. Surge 50, 60Hz (Itsm) [Max]Current - Non Rep. Surge 50, 60Hz (Itsm) [Min]Voltage - Collector Emitter Breakdown (Max) [Max]IGBT TypeTd (on/off) @ 25°CTd (on/off) @ 25°CDiode ConfigurationCurrent - Average Rectified (Io) (per Diode)
IXYS
IXFP8N50PM
42 W
20 nC
10 V
TO-220-3
-55 °C
150 °C
Through Hole
500 V
5.5 V
1050 pF
TO-220-3
N-Channel
MOSFET (Metal Oxide)
800 mOhm
30 V
4.4 A
IXYS
DSEP60-06AZ-TUB
D3PAK (2 Leads + Tab)
TO-268-3
TO-268AA
Surface Mount
TO-268AA (D3Pak-HV)
Standard
600 V
2.04 V
175 ░C
-55 C
60 A
200 mA
500 ns
650 µA
35 ns
67 pF
IXYS
IXYH50N170C
TO-247-3
-55 °C
175 ░C
Through Hole
TO-247 (IXYH)
44 ns
260 nC
178 A
1500 W
20 ns
180 ns
1700 V
460 A
1 Ohm
15 V
50 A
850 V
5.6 mJ
8.7 mJ
3.7 V
IXYS
IXFE180N10
500 W
10 V
SOT-227-4
miniBLOC
-55 °C
150 °C
Chassis Mount
100 V
4 V
9100 pF
SOT-227B
N-Channel
MOSFET (Metal Oxide)
8 mOhm
20 V
176 A
360 nC
IXYS
IXTY2N60P
10 V
DPAK (2 Leads + Tab)
SC-63
TO-252-3
-55 °C
150 °C
Surface Mount
600 V
5 V
240 pF
TO-252AA
N-Channel
MOSFET (Metal Oxide)
5.1 Ohm
30 V
2 A
7 nC
55 W
IXYS
VVZ175-14IO7
PWS-E2
-40 °C
125 ¯C
Chassis Mount
167 A
3 Diodes
200 mA
1.5 V
100 mA
Bridge
3-Phase
SCRs/Diodes
89 A
1.4 kV
1600 A
1500 A
IXYS
IXST30N60B2D1
D3PAK (2 Leads + Tab)
TO-268-3
TO-268AA
-55 °C
150 °C
Surface Mount
TO-268AA
30 ns
50 nC
250 W
90 A
5 Ohm
15 V
24 A
400 V
550 µJ
2.5 V
600 V
PT
30 ns
130 ns
IXYS
DSSK80-006B
TO-247-3
Through Hole
TO-247AD
Schottky
60 V
150 °C
-55 °C
200 mA
500 ns
20 mA
1 Pair Common Cathode
40 A
IXYS
DPG15I200PA
TO-220-2
Through Hole
TO-220AC
Standard
200 V
1.26 V
175 ░C
-55 C
15 A
200 mA
500 ns
1 µA
35 ns
IXYS
IXGH32N90B2D1
TO-247-3
-55 °C
150 °C
Through Hole
TO-247AD
190 ns
89 nC
64 A
300 W
900 V
200 A
5 Ohm
15 V
32 A
720 V
2.2 mJ
2.7 V
PT
20 ns
260 ns