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Infineon Technologies

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(8364)

...

Part	Memory Format	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Mounting Type	Memory Organization	Memory Interface	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Type	Technology	Clock Frequency	Memory Size	Current - Hold (Ih) (Max) [Max]	Number of SCRs, Diodes	Current - Non Rep. Surge 50, 60Hz (Itsm)	Current - On State (It (RMS)) (Max) [Max]	Voltage - Off State	Current - Gate Trigger (Igt) (Max) [Max]	Structure	Current - On State (It (AV)) (Max) [Max]	Voltage - Gate Trigger (Vgt) (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package [x]	Supplier Device Package [y]	Data Rate	Protocol	Type	Gate Charge (Qg) (Max) @ Vgs	Current - Max [Max]	Resistance @ If, F	Capacitance @ Vr, F	Diode Type	Operating Temperature	Configuration	FET Feature	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Test Condition	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max)	Switching Energy	Vce(on) (Max) @ Vge, Ic	Gate Charge
Infineon Technologies CY7C1319SV18-250BZC	SRAM	70 °C	0 °C	165-FBGA (13x15)	Surface Mount	1M x 18	Parallel	165-LBGA	1.9 V	1.7 V	Volatile	SRAM - Synchronous DDR II	250 MHz	18 Mbit
Infineon Technologies T2871N80TOHXPSA1		125 °C	-40 °C		Chassis Mount			TO-200AF							350 mA	1 SCR	93000 A	4120 A	8 kV	350 mA	Single	3660 A	2.5 V
Infineon Technologies BSP320SL6433		150 °C	-55 °C	PG-SOT223-4-21	Surface Mount			TO-261-4 TO-261AA				MOSFET (Metal Oxide)												20 V	120 mOhm	60 V	12 nC	1.8 W	10 V	N-Channel	340 pF	2.9 A	4 V
Infineon Technologies CY7B9234-270JC		70 °C	0 °C	28-PLCC	Surface Mount			28-LCC (J-Lead)	5.5 V	4.5 V																								11.53	11.53	360 Mbps	Fibre Channel	Driver
Infineon Technologies IPZA60R016CM8XKSA1		150 °C	-55 °C	PG-TO247-4-U02	Through Hole			TO-247-4				MOSFET (Metal Oxide)												20 V	16 mOhm	600 V		521 W	10 V	N-Channel	7545 pF	123 A	4.7 V						171 nC
Infineon Technologies BA895E6327				SCD-80				SC-80																																50 mA	7 Ohm	0.6 pF	PIN - Single	150 °C
Infineon Technologies IRFHM8363TR2PBF				8-PQFN-Dual	Surface Mount			8-PowerVDFN				MOSFET (Metal Oxide)													14.9 mOhm	30 V					1165 pF	11 A	2.35 V	3.3	3.3				15 nC						2 N-Channel (Dual)	Logic Level Gate	2.7 W
Infineon Technologies BSF083N03LQG		150 °C	-40 °C	CanPAK M™ MG-WDSON-2	Surface Mount			3-WDSON				MOSFET (Metal Oxide)												20 V	8.3 mOhm	30 V	18 nC	2.2 W 36 W	4.5 V 10 V	N-Channel		13 A 53 A																1800 pF	2.2 V
Infineon Technologies IRGP4790D-EPBF		175 °C	-40 C	TO-247AD	Through Hole			TO-247-3																																							455 W			140 A	225 A	10 Ohm 15 V 75 A 400 V	170 ns	650 V	2.2 mJ 2500 µJ	2 V	210 nC
Infineon Technologies IRF3707ZS		175 ░C	-55 °C	D2PAK	Surface Mount			D2PAK (2 Leads + Tab) TO-263-3 TO-263AB				MOSFET (Metal Oxide)												20 V	9.5 mOhm	30 V		57 W	4.5 V 10 V	N-Channel	1210 pF	59 A	2.25 V						15 nC

Series	Category	# Parts	Status	Description

Infineon TechnologiesTLE4941	Magnetic Sensors	1	1
Infineon TechnologiesTLE49411	Sensors, Transducers	2	4
Infineon TechnologiesTLE49462	Magnetic Sensors	1	1
Infineon TechnologiesTLE4955	Switches (Solid State)	2	8
Infineon TechnologiesTLE49595	Position, Proximity, Speed (Modules)	1	1
Infineon TechnologiesTLE49611	Switches (Solid State)	1	1
Infineon TechnologiesTLE49613	Sensors, Transducers	1	4
Infineon TechnologiesTLE49615	Switches (Solid State)	1	1
Infineon TechnologiesTLE49642	Switches (Solid State)	1	1
Infineon TechnologiesTLE49644	Sensors, Transducers	1	1