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Infineon Technologies

Series List(6458)

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SeriesCategory# PartsStatusDescription
Infineon TechnologiesS28HS512
Memory61
Infineon TechnologiesS29AL008
Integrated Circuits (ICs)191
Infineon TechnologiesS29AL016
Memory131
Infineon TechnologiesS29AS008
Integrated Circuits (ICs)71
Infineon TechnologiesS29AS016
Integrated Circuits (ICs)81
Infineon TechnologiesS29CD016
Integrated Circuits (ICs)111
Infineon TechnologiesS29CD032
Integrated Circuits (ICs)38
Infineon TechnologiesS29CL016
Memory28
Infineon TechnologiesS29CL032
Integrated Circuits (ICs)38
Infineon TechnologiesS29GL01
Memory941

Standalone parts(8364)

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PartMemory FormatOperating Temperature [Max]Operating Temperature [Min]Supplier Device PackageMounting TypeMemory OrganizationMemory InterfacePackage / CaseVoltage - Supply [Max]Voltage - Supply [Min]Memory TypeTechnologyClock FrequencyMemory SizeCurrent - Hold (Ih) (Max) [Max]Number of SCRs, DiodesCurrent - Non Rep. Surge 50, 60Hz (Itsm)Current - On State (It (RMS)) (Max) [Max]Voltage - Off StateCurrent - Gate Trigger (Igt) (Max) [Max]StructureCurrent - On State (It (AV)) (Max) [Max]Voltage - Gate Trigger (Vgt) (Max)Vgs (Max)Rds On (Max) @ Id, VgsDrain to Source Voltage (Vdss)Gate Charge (Qg) (Max) @ Vgs [Max]Power Dissipation (Max)Drive Voltage (Max Rds On, Min Rds On)FET TypeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSupplier Device Package [x]Supplier Device Package [y]Data RateProtocolTypeGate Charge (Qg) (Max) @ VgsCurrent - Max [Max]Resistance @ If, FCapacitance @ Vr, FDiode TypeOperating TemperatureConfigurationFET FeaturePower - Max [Max]Input Capacitance (Ciss) (Max) @ Vds [Max]Vgs(th) (Max) @ Id [Max]Current - Collector (Ic) (Max) [Max]Current - Collector Pulsed (Icm)Test ConditionReverse Recovery Time (trr)Voltage - Collector Emitter Breakdown (Max)Switching EnergyVce(on) (Max) @ Vge, IcGate Charge
Infineon Technologies
CY7C1319SV18-250BZC
SRAM
70 °C
0 °C
165-FBGA (13x15)
Surface Mount
1M x 18
Parallel
165-LBGA
1.9 V
1.7 V
Volatile
SRAM - Synchronous
DDR II
250 MHz
18 Mbit
Infineon Technologies
T2871N80TOHXPSA1
125 °C
-40 °C
Chassis Mount
TO-200AF
350 mA
1 SCR
93000 A
4120 A
8 kV
350 mA
Single
3660 A
2.5 V
Infineon Technologies
BSP320SL6433
150 °C
-55 °C
PG-SOT223-4-21
Surface Mount
TO-261-4
TO-261AA
MOSFET (Metal Oxide)
20 V
120 mOhm
60 V
12 nC
1.8 W
10 V
N-Channel
340 pF
2.9 A
4 V
Infineon Technologies
CY7B9234-270JC
70 °C
0 °C
28-PLCC
Surface Mount
28-LCC (J-Lead)
5.5 V
4.5 V
11.53
11.53
360 Mbps
Fibre Channel
Driver
Infineon Technologies
IPZA60R016CM8XKSA1
150 °C
-55 °C
PG-TO247-4-U02
Through Hole
TO-247-4
MOSFET (Metal Oxide)
20 V
16 mOhm
600 V
521 W
10 V
N-Channel
7545 pF
123 A
4.7 V
171 nC
Infineon Technologies
BA895E6327
SCD-80
SC-80
50 mA
7 Ohm
0.6 pF
PIN - Single
150 °C
Infineon Technologies
IRFHM8363TR2PBF
8-PQFN-Dual
Surface Mount
8-PowerVDFN
MOSFET (Metal Oxide)
14.9 mOhm
30 V
1165 pF
11 A
2.35 V
3.3
3.3
15 nC
2 N-Channel (Dual)
Logic Level Gate
2.7 W
Infineon Technologies
BSF083N03LQG
150 °C
-40 °C
CanPAK M™
MG-WDSON-2
Surface Mount
3-WDSON
MOSFET (Metal Oxide)
20 V
8.3 mOhm
30 V
18 nC
2.2 W
36 W
4.5 V
10 V
N-Channel
13 A
53 A
1800 pF
2.2 V
Infineon Technologies
IRGP4790D-EPBF
175 °C
-40 C
TO-247AD
Through Hole
TO-247-3
455 W
140 A
225 A
10 Ohm
15 V
75 A
400 V
170 ns
650 V
2.2 mJ
2500 µJ
2 V
210 nC
Infineon Technologies
IRF3707ZS
175 ░C
-55 °C
D2PAK
Surface Mount
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
MOSFET (Metal Oxide)
20 V
9.5 mOhm
30 V
57 W
4.5 V
10 V
N-Channel
1210 pF
59 A
2.25 V
15 nC