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Harris Corporation
Standalone parts(1551)
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| Part | Output Type | Logic Type | Number of Elements | Voltage - Supply [Min] | Voltage - Supply [Max] | Supplier Device Package | Package / Case | Package / Case | Package / Case | Current - Output High, Low [custom] | Current - Output High, Low [custom] | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Number of Bits per Element | Gain Bandwidth Product | Voltage - Supply Span (Min) [Min] | Amplifier Type | Operating Temperature [Max] | Operating Temperature [Min] | Current - Supply | Number of Circuits | Current - Input Bias | Voltage - Supply Span (Max) [Max] | Slew Rate | Current - Output / Channel | Voltage - Input Offset | Number of Bits | Supply Voltage [Max] | Supply Voltage [Min] | Power - Max [Max] | Gate Charge | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switch Circuit | On-State Resistance (Max) [Max] | Channel Capacitance (CS(off), CD(off)) [custom] | Channel Capacitance (CS(off), CD(off)) [custom] | Multiplexer/Demultiplexer Circuit | Charge Injection | Voltage - Supply, Single (V+) | Crosstalk | Switch Time (Ton, Toff) (Max) [custom] | Switch Time (Ton, Toff) (Max) [custom] | Current - Leakage (IS(off)) (Max) [Max] | Voltage - Supply, Dual (V±) [Max] | Voltage - Supply, Dual (V±) [Min] | Package / Case [x] | Package / Case [y] | Rds On (Max) @ Id, Vgs | FET Type | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Drain to Source Voltage (Vdss) | Power Dissipation (Max) |
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Harris Corporation | 3-State | Buffer Non-Inverting | 1 | 4.5 V | 5.5 V | 16-PDIP | 0.3 in | 16-DIP | 7.62 mm | 4 mA | 4 mA | 125 °C | -55 °C | Through Hole | 6 | ||||||||||||||||||||||||||||||||||||||||||||||
Harris Corporation | 8-PDIP | 0.3 in | 8-DIP | 7.62 mm | Through Hole | 80 MHz | 44 V | General Purpose | 75 ░C | 0 °C | 3.5 mA | 1 | 15 nA | 44 V | 20 V/çs | 25 mA | 30 çV | ||||||||||||||||||||||||||||||||||||||||||||
Harris Corporation | Binary Rate Multiplier | 16-PDIP | 0.3 in | 16-DIP | 7.62 mm | Through Hole | 125 °C | -55 °C | 4 | 18 V | 3 V | ||||||||||||||||||||||||||||||||||||||||||||||||||
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Harris Corporation | TO-247 | TO-247-3 | Through Hole | 150 °C | -55 °C | 208 W | 265 nC | 50 A | 600 V | 2.9 V | 200 A | ||||||||||||||||||||||||||||||||||||||||||||||||||
Harris Corporation | 8-CERDIP | 0.3 in | 8-CDIP | 7.62 mm | Through Hole | 12 MHz | 30 V | General Purpose | 125 °C | -55 °C | 1 | 25 nA | 30 V | ||||||||||||||||||||||||||||||||||||||||||||||||
Harris Corporation | 16-SOIC | 16-SOIC | Surface Mount | 85 °C | -40 °C | 4 | SPST | 35 Ohm | 9 pF | 9 pF | 1:1 | 5 pC | 15 V | -85 dB | 145 ns | 145 ns | 250 pA | 15 V | -15 V | 0.154 in | 3.9 mm | ||||||||||||||||||||||||||||||||||||||||
Harris Corporation | TO-247 | TO-247-3 | Through Hole | 150 °C | -55 °C | 4.2 Ohm | N-Channel | 4 V | 10 V | 20 V | 3.9 A | 120 nC | MOSFET (Metal Oxide) | 1000 V | 150 W | ||||||||||||||||||||||||||||||||||||||||||||||
Harris Corporation | 8-CERDIP | 0.3 in | 8-CDIP | 7.62 mm | Through Hole | 50 MHz | 13 V | General Purpose | 125 °C | -55 °C | 10 mA | 1 | 5 µA | 30 V | 240 V/µs | 50 mA | |||||||||||||||||||||||||||||||||||||||||||||
Harris Corporation | 16-PDIP | 0.3 in | 16-DIP | 7.62 mm | Through Hole |