Beta

⌘K

D

Diodes Inc

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(5404)

...

Part	Frequency - Switching	Topology	Package / Case	Package / Case [custom]	Package / Case	Mounting Type	Output Phases	Clock Sync	Operating Temperature [Max]	Operating Temperature [Min]	Output Type	Voltage - Supply (Vcc/Vdd) [Min]	Voltage - Supply (Vcc/Vdd) [Max]	Synchronous Rectifier	Number of Outputs	Function	Supplier Device Package	Output Configuration	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Capacitance @ Vr, F	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Grade	Transistor Type	Qualification	Type	Frequency	Size / Dimension [x]	Size / Dimension [y]	Size / Dimension [x]	Size / Dimension [y]	Height - Seated (Max) [Max] [z]	Height - Seated (Max) [Max] [z]	Frequency Stability	ESR (Equivalent Series Resistance)	Frequency Tolerance	Load Capacitance	Operating Mode	Voltage - Supply	Base Resonator	Output	Current - Supply (Disable) (Max) [Max]	Current - Supply (Max) [Max]	Reverse Recovery Time (trr)	Speed	Voltage - Forward (Vf) (Max) @ If	Battery Chemistry	Fault Protection	Number of Cells	Number of Circuits	Charge Injection	Switch Circuit	Current - Leakage (IS(off)) (Max) [Max]	Channel-to-Channel Matching (ΔRon)	On-State Resistance (Max) [Max]	Multiplexer/Demultiplexer Circuit	Voltage - Supply, Single (V+) [Min]	Voltage - Supply, Single (V+) [Max]	Channel Capacitance (CS(off), CD(off)) [custom]	Channel Capacitance (CS(off), CD(off)) [custom]	Crosstalk	Switch Time (Ton, Toff) (Max) [custom]	Switch Time (Ton, Toff) (Max) [custom]	-3db Bandwidth
Diodes Inc ZXSC100X8TA	200 kHz	Boost	8-MSOP 8-TSSOP	0.118 in	3 mm	Surface Mount	1		70 °C	0 °C	Transistor Driver	0.98 V	3.5 V		1	Step-Up	8-MSOP	Positive
Diodes Inc MBR1045			TO-220-2			Through Hole											TO-220AC		200 mA 500 ns	840 mV	150 °C	-65 C	100 µA	45 V	Schottky	10 A	400 pF
Diodes Inc BC847CQ-7-F			SC-59 SOT-23-3 TO-236-3			Surface Mount			150 °C	-65 °C							SOT-23-3											600 mV	300 MHz	420	310 mW	45 V	100 mA	15 nA	Automotive	NPN	AEC-Q101
Diodes Inc FL2500151			4-SMD No Lead			Surface Mount			100 °C	-20 C																												MHz Crystal	25 MHz	3.2 mm	2.5 mm	0.126 in	0.098 in	0.031 "	0.78 mm	20 ppm	50 Ohms	15 ppm	18 pF	Fundamental
Diodes Inc FDD300004			4-SMD No Lead			Surface Mount			85 °C	-40 °C						Enable/Disable																						XO (Standard)	133 MHz	5 mm	3.2 mm	0.197 in	0.126 "	0.051 in	1.3 mm	50 ppm					3.3 V	Crystal	CMOS	10 ÁA	45 mA
Diodes Inc 1N4002G-T			Axial DO-204AL DO-41			Through Hole											DO-41		200 mA		175 ░C	-65 C	5 µA	100 V	Standard	1 A	8 pF																													2 µs	Standard Recovery >500ns	1 V
Diodes Inc MBRF20150CTL
Diodes Inc AP9101CAK-BUTRG1			SC-74A SOT-753			Surface Mount			85 °C	-40 °C						Battery Protection	SOT-25																																										Lithium Ion/Polymer	Over Current Over Voltage	1
Diodes Inc RS1MWF-7			SOD-123F			Surface Mount											SOD-123F		200 mA 500 ns		150 °C	-55 °C	5 µA	1000 V	Standard	1 A																														500 ns		1.3 V
Diodes Inc 74LVC1G3157DW-7			6-TSSOP SC-88 SOT-363			Surface Mount			125 °C	-40 °C							SOT-363																																													1	7 pC	SPDT	1 µA	250 mOhm	10 Ohms	2:1	1.65 V	5.5 V	6 pF	6 pF	-42 dB	4 ns	7.5 ns	300 MHz

Series	Category	# Parts	Status	Description

Diodes IncZXT10P20DE6QPNP, 20V, 2.5A, SOT26	Transistors	1	1	This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
Diodes IncZXT10P40DE6PNP, 40V, 2A, SOT26	Bipolar (BJT)	1	1	PNP, 40V, 2A, SOT26
Diodes IncZXT11N15D	Transistors	1	8
Diodes IncZXT11N20DFNPN, 20V, 2.5A, SOT23	Bipolar (BJT)	1	8	TN1.pdf
Diodes IncZXT12N20D	Bipolar (BJT)	1	8
Diodes IncZXT12N20DXDual NPN, 20V, 3.5A, MSOP-8	Discrete Semiconductor Products	1	1	This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.
Diodes IncZXT12P12D	Bipolar (BJT)	1	8
Diodes IncZXT12P12DXDual PNP, 12V, 3A, MSOP-8	Discrete Semiconductor Products	1	1	This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.
Diodes IncZXT13N15DE6NPN, 15V, 5A, SOT26	Single	1	1	NPN, 15V, 5A, SOT26
Diodes IncZXT13N20D	Single Bipolar Transistors	1	8