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Diodes Inc
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Frequency - Switching | Topology | Package / Case | Package / Case [custom] | Package / Case | Mounting Type | Output Phases | Clock Sync | Operating Temperature [Max] | Operating Temperature [Min] | Output Type | Voltage - Supply (Vcc/Vdd) [Min] | Voltage - Supply (Vcc/Vdd) [Max] | Synchronous Rectifier | Number of Outputs | Function | Supplier Device Package | Output Configuration | Speed | Voltage - Forward (Vf) (Max) @ If [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Current - Average Rectified (Io) | Capacitance @ Vr, F | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Grade | Transistor Type | Qualification | Type | Frequency | Size / Dimension [x] | Size / Dimension [y] | Size / Dimension [x] | Size / Dimension [y] | Height - Seated (Max) [Max] [z] | Height - Seated (Max) [Max] [z] | Frequency Stability | ESR (Equivalent Series Resistance) | Frequency Tolerance | Load Capacitance | Operating Mode | Voltage - Supply | Base Resonator | Output | Current - Supply (Disable) (Max) [Max] | Current - Supply (Max) [Max] | Reverse Recovery Time (trr) | Speed | Voltage - Forward (Vf) (Max) @ If | Battery Chemistry | Fault Protection | Number of Cells | Number of Circuits | Charge Injection | Switch Circuit | Current - Leakage (IS(off)) (Max) [Max] | Channel-to-Channel Matching (ΔRon) | On-State Resistance (Max) [Max] | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) [Min] | Voltage - Supply, Single (V+) [Max] | Channel Capacitance (CS(off), CD(off)) [custom] | Channel Capacitance (CS(off), CD(off)) [custom] | Crosstalk | Switch Time (Ton, Toff) (Max) [custom] | Switch Time (Ton, Toff) (Max) [custom] | -3db Bandwidth |
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Diodes Inc | 200 kHz | Boost | 8-MSOP 8-TSSOP | 0.118 in | 3 mm | Surface Mount | 1 | 70 °C | 0 °C | Transistor Driver | 0.98 V | 3.5 V | 1 | Step-Up | 8-MSOP | Positive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Diodes Inc | TO-220-2 | Through Hole | TO-220AC | 200 mA 500 ns | 840 mV | 150 °C | -65 C | 100 µA | 45 V | Schottky | 10 A | 400 pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Diodes Inc | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 150 °C | -65 °C | SOT-23-3 | 600 mV | 300 MHz | 420 | 310 mW | 45 V | 100 mA | 15 nA | Automotive | NPN | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Diodes Inc | 4-SMD No Lead | Surface Mount | 100 °C | -20 C | MHz Crystal | 25 MHz | 3.2 mm | 2.5 mm | 0.126 in | 0.098 in | 0.031 " | 0.78 mm | 20 ppm | 50 Ohms | 15 ppm | 18 pF | Fundamental | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Diodes Inc | 4-SMD No Lead | Surface Mount | 85 °C | -40 °C | Enable/Disable | XO (Standard) | 133 MHz | 5 mm | 3.2 mm | 0.197 in | 0.126 " | 0.051 in | 1.3 mm | 50 ppm | 3.3 V | Crystal | CMOS | 10 ÁA | 45 mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Diodes Inc | Axial DO-204AL DO-41 | Through Hole | DO-41 | 200 mA | 175 ░C | -65 C | 5 µA | 100 V | Standard | 1 A | 8 pF | 2 µs | Standard Recovery >500ns | 1 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Diodes Inc | SC-74A SOT-753 | Surface Mount | 85 °C | -40 °C | Battery Protection | SOT-25 | Lithium Ion/Polymer | Over Current Over Voltage | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Diodes Inc | SOD-123F | Surface Mount | SOD-123F | 200 mA 500 ns | 150 °C | -55 °C | 5 µA | 1000 V | Standard | 1 A | 500 ns | 1.3 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Diodes Inc | 6-TSSOP SC-88 SOT-363 | Surface Mount | 125 °C | -40 °C | SOT-363 | 1 | 7 pC | SPDT | 1 µA | 250 mOhm | 10 Ohms | 2:1 | 1.65 V | 5.5 V | 6 pF | 6 pF | -42 dB | 4 ns | 7.5 ns | 300 MHz |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
Diodes IncFM3900001 | Crystals, Oscillators, Resonators | 1 | 1 | |
Diodes IncFMC500001 | Crystals, Oscillators, Resonators | 1 | 1 | |
Diodes IncFMMT2222A | Discrete Semiconductor Products | 1 | 8 | |
Diodes IncFMMT2907A | Bipolar (BJT) | 1 | 8 | |
| Bipolar (BJT) | 1 | 8 | NPN, 60V, 0.3A, SOT23 | |
| Transistors | 1 | 1 | The FMMT411 is a silicon planar bipolar transistor designed for operating in avalanche mode. Tight process control and low inductance packaging combine to produce high-current pulses with fast edges. | |
| Bipolar (BJT) | 1 | 1 | The FMMT411FDBW is a silicon planar bipolar transistor designed for operating in avalanche mode. Tight process control and low inductance packaging combine to produce high on current pulses with fast edges. | |
| Single Bipolar Transistors | 2 | 1 | The FMMT413 is a NPN silicon planar bipolar transistor optimized for avalanche mode operation. Tight process control and low inductance packaging combine to produce high current pulses with fast edges, making thesebipolar transistorsideal for laser diode driving. | |
Diodes IncFMMT417 | Single Bipolar Transistors | 2 | 1 | |
| Bipolar (BJT) | 2 | 1 | NPN, 400V, 0.225A, SOT23 | |