IS43R16320 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT PAR 66TSOP II
| Part | Technology | Memory Interface (Type) | Memory Format | Package Width | Package Name | Package Length | Memory Type | Operating Temperature (Max) | Operating Temperature (Min) | Write Cycle Time - Word | Write Cycle Time - Page | Mounting Type | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Clock Frequency | Memory Size | Memory Width | Memory Depth | Access Time | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | SDRAM - DDR | Parallel | DRAM | 10.16 mm | 66-TSOP II 66-TSSOP | 10.16 mm | Volatile | 85 °C | -40 °C | 15 ns | 15 ns | Surface Mount | 2.7 V | 2.3 V | 166 MHz | 512 Mb | 16 bit | 32 M | 700 ps | |
ISSI, Integrated Silicon Solution Inc | SDRAM - DDR | Parallel | DRAM | 10.16 mm | 66-TSOP II 66-TSSOP | 10.16 mm | Volatile | 85 °C | -40 °C | 15 ns | 15 ns | Surface Mount | 2.7 V | 2.3 V | 200 MHz | 512 Mb | 16 bit | 32 M | 700 ps | |
ISSI, Integrated Silicon Solution Inc | SDRAM - DDR | Parallel | DRAM | 10.16 mm | 66-TSOP II 66-TSSOP | 10.16 mm | Volatile | 70 °C | 0 °C | 15 ns | 15 ns | Surface Mount | 2.7 V | 2.3 V | 166 MHz | 512 Mb | 16 bit | 32 M | 700 ps | |
ISSI, Integrated Silicon Solution Inc | SDRAM - DDR | Parallel | DRAM | 13 mm | 60-TFBGA | 8 mm | Volatile | 85 °C | -40 °C | 15 ns | 15 ns | Surface Mount | 2.7 V | 2.3 V | 166 MHz | 512 Mb | 16 bit | 32 M | 700 ps | 60-TFBGA |
ISSI, Integrated Silicon Solution Inc | SDRAM - DDR | Parallel | DRAM | 13 mm | 60-TFBGA | 8 mm | Volatile | 70 °C | 0 °C | 15 ns | 15 ns | Surface Mount | 2.7 V | 2.3 V | 166 MHz | 512 Mb | 16 bit | 32 M | 700 ps | 60-TFBGA |
ISSI, Integrated Silicon Solution Inc | SDRAM - DDR | Parallel | DRAM | 13 mm | 60-TFBGA | 8 mm | Volatile | 85 °C | -40 °C | 15 ns | 15 ns | Surface Mount | 2.7 V | 2.3 V | 166 MHz | 512 Mb | 16 bit | 32 M | 700 ps | 60-TFBGA |
ISSI, Integrated Silicon Solution Inc | SDRAM - DDR | Parallel | DRAM | 10.16 mm | 66-TSOP II 66-TSSOP | 10.16 mm | Volatile | 70 °C | 0 °C | 15 ns | 15 ns | Surface Mount | 2.7 V | 2.5 V | 200 MHz | 512 Mb | 16 bit | 32 M | 700 ps | |
ISSI, Integrated Silicon Solution Inc | SDRAM - DDR | Parallel | DRAM | 13 mm | 60-TFBGA | 8 mm | Volatile | 85 °C | -40 °C | 15 ns | 15 ns | Surface Mount | 2.7 V | 2.3 V | 200 MHz | 512 Mb | 16 bit | 32 M | 700 ps | 60-TFBGA |
ISSI, Integrated Silicon Solution Inc | SDRAM - DDR | SSTL_2 | DRAM | 10.16 mm | 66-TSOP II 66-TSSOP | 10.16 mm | Volatile | 70 °C | 0 °C | 15 ns | 15 ns | Surface Mount | 2.7 V | 2.3 V | 200 MHz | 512 Mb | 16 bit | 32 M | 700 ps | |
ISSI, Integrated Silicon Solution Inc | SDRAM - DDR | Parallel | DRAM | 10.16 mm | 66-TSOP II 66-TSSOP | 10.16 mm | Volatile | 85 °C | -40 °C | 15 ns | 15 ns | Surface Mount | 2.7 V | 2.3 V | 200 MHz | 512 Mb | 16 bit | 32 M | 700 ps |