DIODE SIL CARB 650V 21.5A DPAK
| Part | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Speed | Technology | Capacitance @ Vr, F | Current - Average Rectified (Io) | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Comchip Technology CDBDSC5650-G | 0 ns | 650 V | 1.7 V | Surface Mount | No Recovery Time | SiC (Silicon Carbide) Schottky | 424 pF | 21.5 A | DPAK | 175 ░C | -55 C | DPAK (2 Leads + Tab), SC-63, TO-252-3 | 100 µA |