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MOSFET P-CH 12V 9.5A 8SO
| Part | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Vgs (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 74 nC | 2.5 W | MOSFET (Metal Oxide) | 9.5 A | 2.5 V 4.5 V | 6000 pF | 12 V | -55 °C | 150 °C | P-Channel | 8-SO | Surface Mount | 20 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 12 V | 600 mV |