MBR60035 Series

Catalog

DIODE MOD SCHOTT 35V 300A 2TOWER

Part	Current - Average Rectified (Io) (per Diode)	Mounting Type	Package Name	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Diode Pair Count	Diode Configuration	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Package / Case	Current - Reverse Leakage	Voltage - Forward (Vf) (Max)	Voltage - DC Reverse (Vr) (Max)	Technology
GeneSiC Semiconductor MBR60035CTR	300 A	Chassis Mount	Twin Tower	150 °C	-55 °C	1 pair	Common Anode	500 ns	200 mA	Twin Tower	1 mA	750 mV	35 V	Schottky
GeneSiC Semiconductor MBR60035CT	300 A	Chassis Mount	Twin Tower	150 °C	-55 °C	1 pair	Common Cathode	500 ns	200 mA	Twin Tower	1 mA	750 mV	35 V	Schottky
GeneSiC Semiconductor MBR60035CTL	300 A	Chassis Mount	Twin Tower	150 °C	-55 °C	1 pair	Common Cathode	500 ns	200 mA	Twin Tower	3 mA	600 mV	35 V	Schottky
GeneSiC Semiconductor MBR60035CT	300 A	Chassis Mount	Twin Tower	150 °C	-55 °C	1 pair	Common Cathode	500 ns	200 mA	Twin Tower	1 mA	750 mV	35 V	Schottky
GeneSiC Semiconductor MBR60035CTR	300 A	Chassis Mount	Twin Tower	150 °C	-55 °C	1 pair	Common Anode	500 ns	200 mA	Twin Tower	1 mA	750 mV	35 V	Schottky
GeneSiC Semiconductor MBR60035CTRL	300 A	Chassis Mount	Twin Tower	150 °C	-55 °C	1 pair	Common Anode	500 ns	200 mA	Twin Tower	3 mA	600 mV	35 V	Schottky
GeneSiC Semiconductor MBR60035CTL	300 A	Chassis Mount	Twin Tower	150 °C	-55 °C	1 pair	Common Cathode	500 ns	200 mA	Twin Tower	3 mA	600 mV	35 V	Schottky
GeneSiC Semiconductor MBR60035CTRL	300 A	Chassis Mount	Twin Tower	150 °C	-55 °C	1 pair	Common Anode	500 ns	200 mA	Twin Tower	3 mA	600 mV	35 V	Schottky