Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET
| Part | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs (Max) | Technology | Supplier Device Package | Power Dissipation (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Power - Max [Max] | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 34 mOhm | 4.5 V 10 V | N-Channel | 20 V | MOSFET (Metal Oxide) | 8-SO | 1.56 W | Surface Mount | 40 V | 5.4 A | 10 nC | 3 V | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in | ||||
Diodes Inc | 34 mOhm | MOSFET (Metal Oxide) | 8-SO | Surface Mount | 40 V | 4.8 A | 18 nC | 3 V | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in | 1.8 W | Logic Level Gate | 453 pF | 2 N-Channel (Dual) |