Catalog
NRND = Not Recommended for New Design
Description
AI
This new generation 30V N channel enhancement mode MOSFET DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die.
Beta
⌘K
NRND = Not Recommended for New Design
NRND = Not Recommended for New Design
| Part | Rds On (Max) @ Id, Vgs | Mounting Type | FET Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Package / Case | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs(th) (Max) @ Id | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 10 mOhm | Surface Mount | N-Channel | POWERDI3333-8 | 14.7 nC | 12 A | 4310 pF | 30 V | 8-PowerVDFN | 20 V | -55 °C | 150 °C | Schottky Diode (Body) | 4.5 V 10 V | MOSFET (Metal Oxide) | 2.5 V | 890 mW |
Diodes Inc | 10 mOhm | Surface Mount | N-Channel | POWERDI3333-8 | 14.7 nC | 12 A | 4310 pF | 30 V | 8-PowerVDFN | 20 V | -55 °C | 150 °C | Schottky Diode (Body) | 4.5 V 10 V | MOSFET (Metal Oxide) | 2.5 V | 890 mW |