DIODE GEN PURP 600V 6A DIE
| Part | Package / Case | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Mounting Type | Current - Reverse Leakage @ Vr | Speed | Speed | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Technology | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Die | -40 °C | 175 ░C | Surface Mount | 27 µA | Standard Recovery >500ns | 200 mA | 1.6 V | Die | Standard | 6 A | 600 V |
Infineon Technologies | Die | -40 °C | 175 ░C | Surface Mount | 27 µA | Standard Recovery >500ns | 200 mA | 1.95 V | Die | Standard | 10 A | 600 V |
Infineon Technologies | Die | -40 °C | 175 ░C | Surface Mount | 27 µA | Standard Recovery >500ns | 200 mA | 1.6 V | Die | Standard | 6 A | 600 V |