Catalog
650V, 20A, THD, Silicon-carbide (SiC) SBD
Description
AI
Shorter recovery time, enabling high-speed switching.
Beta
⌘K
650V, 20A, THD, Silicon-carbide (SiC) SBD
650V, 20A, THD, Silicon-carbide (SiC) SBD
| Part | Technology | Voltage - Forward (Vf) (Max) | Operating Temperature - Junction | Capacitance | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) | Reverse Recovery Time (trr) | Package Name | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Mounting Type | Current - Reverse Leakage | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | SiC (Silicon Carbide) Schottky | 1.5 V | 175 °C | 1000 pF | 20 A | 650 V | 0 ns | TO-220FM | 500 mA | No Recovery Time | 500 mA 500 mA | Through Hole | 100 µA | TO-220-2 Full Pack |