Beta
⌘K
POWER MOSFET, N CHANNEL, 100 V, 9.3 A, 0.018 OHM, PQFN, SURFACE MOUNT
| Part | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drain to Source Voltage (Vdss) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3.1 W 8.3 W | MOSFET (Metal Oxide) | 9.3 A 46 A | PQFN (5x6) Single Die | 100 V | Surface Mount | 36 nC | 8-PowerVDFN | 1510 pF | 18 mOhm | 20 V | 10 V | N-Channel | -55 °C | 150 °C |