Catalog
P-Channel Enhancement Mode MOSFET
Key Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Technology | Vgs(th) (Max) @ Id | Grade | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | FET Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Qualification | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 60.2 nC | Surface Mount | MOSFET (Metal Oxide) | 1.1 V | Automotive | 8-SOIC | 3.9 mm | 0.154 in | 8-SO | 2575 pF | 10 V | 2.5 V | P-Channel | 13 mOhm | 20 V | 12 V | AEC-Q101 | 9.3 A | -55 °C | 155 °C | |
Diodes Inc | 56.9 nC | Surface Mount | MOSFET (Metal Oxide) | 1.1 V | 8-SOIC | 3.9 mm | 0.154 in | 8-SO | 2444 pF | 10 V | 2.5 V | P-Channel | 13 mOhm | 20 V | 12 V | 10 A | -55 °C | 150 °C | 2.5 W |