Beta
⌘K
DIODE GEN PURP 200V 1A TS-1
| Part | Mounting Type | Grade | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Package / Case | Current - Reverse Leakage @ Vr | Qualification | Current - Average Rectified (Io) | Supplier Device Package | Capacitance @ Vr, F | Speed | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | Through Hole | Automotive | 150 °C | -55 °C | Standard | 200 V | 35 ns | T-18 Axial | 5 µA | AEC-Q101 | 1 A | TS-1 | 20 pF | 200 mA 500 ns | 950 mV |