Beta
⌘K
P-CHANNEL MOSFETS IN LOGIC LEVEL, REDUCING DESIGN COMPLEXITY IN MEDIUM AND LOW POWER APPLICATIONS
| Part | Mounting Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Surface Mount | 20 V | 1.35 A 6.7 A | 150 V | 4.5 V 10 V | 8-PowerTDFN | -55 °C | 175 ░C | PG-TSDSON-8 FL | 2 V | 40 nC | P-Channel | 1400 pF | 560 mOhm | MOSFET (Metal Oxide) |