Beta
⌘K
TRANS 2NPN PREBIAS 0.1W ES6
| Part | Vce Saturation (Max) @ Ib, Ic | Mounting Type | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Frequency - Transition | Package / Case | Current - Collector (Ic) (Max) [Max] | Resistor - Base (R1) | Transistor Type | Supplier Device Package | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 300 mV | Surface Mount | 100 mW | 50 V | 250 MHz | SOT-563 SOT-666 | 100 mA | 4.7 kOhms | 2 NPN - Pre-Biased (Dual) | ES6 | 100 nA | 120 |