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IR MOSFET™ N-CHANNEL SMALL POWER ; SOT-23 PACKAGE; 29 MOHM;
| Part | Technology | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Package / Case | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Drain to Source Voltage (Vdss) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 29 mOhm | 2.5 V 4.5 V | 1.1 V | SC-59 SOT-23-3 TO-236-3 | Surface Mount | Micro3™/SOT-23 | 650 pF | -55 °C | 150 °C | N-Channel | 30 V | 12 V | 5 A | 1.3 W | 6.8 nC |