PHK4N Series
Manufacturer: NXP USA Inc.
Beta
⌘K
MOSFET N-CH 200V 4A 8SO
| Part | Drain to Source Voltage (Vdss) | Technology | Current - Continuous Drain (Id) (Tc) | Rds On (Max) | Vgs(th) (Max) | Power Dissipation (Max) | FET Type | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | Package Length | Package Name | Package Width | Vgs (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Input Capacitance (Ciss) (Max) | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NXP USA Inc. | 200 V | MOSFET (Metal Oxide) | 4 A | 130 mOhm | 4 V | 6.25 W | N-Channel | -55 °C | 150 °C | Surface Mount | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 20 V | 10 V | 5 V | 1230 pF | 26 nC |
 NXP USA Inc. | 100 V | MOSFET (Metal Oxide) | 70 mOhm | 4 V | 2.5 W | N-Channel | -65 °C | 150 °C | Surface Mount | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 20 V | 10 V | 4.5 V | 880 pF | 22 nC |