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20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Package / Case | Vgs (Max) | Package Name | Mounting Type | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Grade | Rds On (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Ta) | Power Dissipation (Max) | Technology | Vgs (Max) Negative | Vgs (Max) Positive | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | Qualification | FET Type | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 6-UDFN Exposed Pad | 20 V | DFN2020MD-6 | Surface Mount | |||||||||||||||||
Nexperia USA Inc. | 6-UDFN Exposed Pad | DFN2020MD-6 | Surface Mount | 1.25 V | 388 pF | Automotive | 122 mOhm | 20 V | 3.2 A | 550 mW | MOSFET (Metal Oxide) | -10 V | 8 V | -55 °C | 175 °C | 5 nC | AEC-Q101 | P-Channel | 3 V | 4.5 V | |
Nexperia USA Inc. | 6-UDFN Exposed Pad | 20 V | DFN2020MD-6 | Surface Mount | 2.5 V | 157 pF | 72 mOhm | 30 V | 5.1 A | 3.3 W | MOSFET (Metal Oxide) | -55 °C | 175 °C | 5 nC 5 nC | N-Channel | 4.5 V | 10 V |