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IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 22 MOHM;
| Part | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | FET Type | Package / Case | Package / Case [y] | Package / Case [x] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Technology | Mounting Type | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 22 mOhm | 1 V | 20 V | N-Channel | 8-SOIC | 3.9 mm | 0.154 in | 4.5 V 10 V | 8.5 A | -55 °C | 150 °C | 30 V | 2.5 W | 1200 pF | 8-SO | MOSFET (Metal Oxide) | Surface Mount | 57 nC |