Beta
⌘K
MOSFET N-CH 100V 100A TO262-3
| Part | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Vgs (Max) | Package / Case | FET Type | Current - Continuous Drain (Id) @ 25°C | Technology | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 206 nC | 6 V 10 V | PG-TO262-3 | -55 °C | 175 ░C | 300 W | 3 mOhm | 20 V | I2PAK TO-262-3 Long Leads TO-262AA | N-Channel | 100 A | MOSFET (Metal Oxide) | Through Hole | 14800 pF | 3.5 V | 100 V |