DMN3006SCA6 Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Technology	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id
Diodes Inc DMN3006SCA6-7	2 N-Channel (Dual) Common Drain	-55 °C	150 °C	X4-DSN3519-6	6-SMD No Lead	30 V	5.5 mOhm	MOSFET (Metal Oxide)	800 mW	2235 pF	13 A	17.7 nC	Surface Mount	2.2 V

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• CSP with Footprint 3.5mm × 1.9mm

• Height = 0.11mm for Low Profile

• ESD Protection of Gate

• Totally Lead-Free & Fully RoHS Compliant

• Halogen- and Antimony-Free. "Green" Device

Description

This new generation MOSFET is designed to minimize on-state resistance (RSS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.