MSRTA200 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 1KV 200A 3TOWER
| Part | Voltage - Forward (Vf) (Max) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Current - Average Rectified (Io) (per Diode) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Voltage - DC Reverse (Vr) (Max) | Mounting Type | Diode Pair Count | Diode Configuration | Package Name | Current - Reverse Leakage | Package / Case | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1.1 V | 150 °C | -55 °C | 200 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 1 kV | Chassis Mount | 1 pair | Series Connection | Three Tower | 10 µA | Three Tower | Standard |
GeneSiC Semiconductor | 1.1 V | 150 °C | -55 °C | 200 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 1200 V | Chassis Mount | 1 pair | Series Connection | 10 µA | Module | Standard | |
GeneSiC Semiconductor | 1.1 V | 150 °C | -55 °C | 200 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 1 kV | Chassis Mount | 1 pair | Series Connection | Three Tower | 10 µA | Three Tower | Standard |
GeneSiC Semiconductor | 1.1 V | 150 °C | -55 °C | 200 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 1600 V | Chassis Mount | 1 pair | Series Connection | Three Tower | 10 µA | Three Tower | Standard |
GeneSiC Semiconductor | 1.1 V | 150 °C | -55 °C | 200 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 1400 V | Chassis Mount | 1 pair | Series Connection | Three Tower | 10 µA | Three Tower | Standard |
GeneSiC Semiconductor | 1.1 V | 150 °C | -55 °C | 200 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 1200 V | Chassis Mount | 1 pair | Series Connection | 10 µA | Module | Standard | |
GeneSiC Semiconductor | 1.1 V | 150 °C | -55 °C | 200 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 600 V | Chassis Mount | 1 pair | Series Connection | Three Tower | 10 µA | Three Tower | Standard |
GeneSiC Semiconductor | 1.1 V | 150 °C | -55 °C | 200 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 1600 V | Chassis Mount | 1 pair | Series Connection | Three Tower | 10 µA | Three Tower | Standard |
GeneSiC Semiconductor | 1.1 V | 150 °C | -55 °C | 200 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 800 V | Chassis Mount | 1 pair | Series Connection | Three Tower | 10 µA | Three Tower | Standard |
GeneSiC Semiconductor | 1.1 V | 150 °C | -55 °C | 200 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 1200 V | Chassis Mount | 1 pair | Series Connection | Three Tower | 10 µA | Three Tower | Standard |