Beta
⌘K
MOSFET, P-CH, 30V, 9.2A, SOIC ROHS COMPLIANT: YES
| Part | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Type | Vgs (Max) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.5 W | 9.2 A | 13.3 mOhm | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | -55 °C | 150 °C | 10 V 20 V | 1110 pF | 8-SO | 30 V | 2.4 V | P-Channel | 25 V | Surface Mount | 38 nC |