P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Drain to Source Voltage (Vdss) | Vgs (Max) | Mounting Type | Vgs(th) (Max) @ Id | Supplier Device Package | FET Type | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Grade | Package / Case | Power Dissipation (Max) | Technology | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Qualification | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 20 V | 8 V | Surface Mount | 900 mV | SOT-23-3 | P-Channel | 10.2 nC | -55 °C | 150 °C | 808 pF | Automotive | SC-59 SOT-23-3 TO-236-3 | 1.4 W | MOSFET (Metal Oxide) | 52 mOhm | 4.2 A | AEC-Q101 | 1.8 V 4.5 V |
Diodes Inc | 20 V | 8 V | Surface Mount | 900 mV | SOT-23-3 | P-Channel | 10.2 nC | -55 °C | 150 °C | 808 pF | SC-59 SOT-23-3 TO-236-3 | 1.4 W | MOSFET (Metal Oxide) | 52 mOhm | 4.2 A | 1.8 V 4.5 V |