IC FLASH 64MBIT SPI/QUAD 8USON
| Part | Memory Size | Operating Temperature [Min] | Operating Temperature [Max] | Memory Format | Memory Organization | Mounting Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Clock Frequency | Memory Interface | Supplier Device Package | Access Time | Package / Case | Memory Type | Technology | Package / Case [y] | Package / Case [x] | Package / Case | Package / Case | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited  | 64 Gbit  | -40 °C  | 125 °C  | FLASH  | 8M x 8  | Surface Mount  | 2.7 V  | 3.6 V  | 140 µs  | 4 ms  | 133 MHz  | SPI - Quad I/O  | 8-USON (3x4)  | 7 ns  | 8-UDFN Exposed Pad  | Non-Volatile  | FLASH - NOR (SLC)  | ||||
GigaDevice Semiconductor (HK) Limited  | 64 Gbit  | -40 °C  | 85 °C  | FLASH  | 8M x 8  | Surface Mount  | 2.7 V  | 3.6 V  | 70 µs  | 2.4 ms  | 133 MHz  | SPI - Quad I/O  | 8-USON (3x4)  | 7 ns  | 8-UDFN Exposed Pad  | Non-Volatile  | FLASH - NOR (SLC)  | ||||
GigaDevice Semiconductor (HK) Limited  | 64 Gbit  | -40 °C  | 105 °C  | FLASH  | 8M x 8  | Surface Mount  | 2.7 V  | 3.6 V  | 140 µs  | 4 ms  | 133 MHz  | SPI - Quad I/O  | 8-SOP  | 7 ns  | 8-SOIC  | Non-Volatile  | FLASH - NOR (SLC)  | 3.9 mm  | 0.154 in  | ||
GigaDevice Semiconductor (HK) Limited  | 64 Gbit  | -40 °C  | 125 °C  | FLASH  | 8M x 8  | Surface Mount  | 2.7 V  | 3.6 V  | 140 µs  | 4 ms  | 133 MHz  | SPI - Quad I/O  | 8-WSON (5x6)  | 7 ns  | 8-WDFN Exposed Pad  | Non-Volatile  | FLASH - NOR (SLC)  | ||||
GigaDevice Semiconductor (HK) Limited  | 64 Gbit  | -40 °C  | 85 °C  | FLASH  | 8M x 8  | Surface Mount  | 2.7 V  | 3.6 V  | 70 µs  | 2.4 ms  | 133 MHz  | SPI - Quad I/O  | 24-TFBGA (6x8)  | 7 ns  | 24-TBGA  | Non-Volatile  | FLASH - NOR (SLC)  | ||||
GigaDevice Semiconductor (HK) Limited  | 64 Gbit  | -40 °C  | 105 °C  | FLASH  | 8M x 8  | Surface Mount  | 2.7 V  | 3.6 V  | 60 µs  | 4 ms  | 120 MHz  | SPI - Quad I/O  | 8-WSON (5x6)  | 7 ns  | 8-WDFN Exposed Pad  | Non-Volatile  | FLASH - NOR (SLC)  | ||||
GigaDevice Semiconductor (HK) Limited  | 64 Gbit  | -40 °C  | 85 °C  | FLASH  | 8M x 8  | Surface Mount  | 2.7 V  | 3.6 V  | 70 µs  | 2.4 ms  | 133 MHz  | SPI - Quad I/O  | 8-SOP  | 7 ns  | 8-SOIC  | Non-Volatile  | FLASH - NOR (SLC)  | 3.9 mm  | 0.154 in  | ||
GigaDevice Semiconductor (HK) Limited  | 64 Gbit  | -40 °C  | 85 °C  | FLASH  | 8M x 8  | Surface Mount  | 2.7 V  | 3.6 V  | 50 µs  | 2.4 ms  | 120 MHz  | SPI - Quad I/O  | 8-DIP  | 8-DIP  | Non-Volatile  | FLASH - NOR  | 0.26 in  | 6.6 mm  | |||
GigaDevice Semiconductor (HK) Limited  | 64 Gbit  | -40 °C  | 85 °C  | FLASH  | 8M x 8  | Surface Mount  | 2.7 V  | 3.6 V  | 50 µs  | 2.4 ms  | 120 MHz  | SPI - Quad I/O  | 16-SOP  | 16-SOIC  | Non-Volatile  | FLASH - NOR  | 7.5 mm  | 0.295 in  | |||
GigaDevice Semiconductor (HK) Limited  | 64 Gbit  | -40 °C  | 125 °C  | FLASH  | 8M x 8  | Surface Mount  | 2.7 V  | 3.6 V  | 140 µs  | 4 ms  | 133 MHz  | SPI - Quad I/O  | 8-USON (4x4)  | 7 ns  | 8-XDFN Exposed Pad  | Non-Volatile  | FLASH - NOR (SLC)  |