MOSFET N-CH 60V 110A 8SOP
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Grade | Power Dissipation (Max) | FET Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Qualification | Mounting Type | Vgs(th) (Max) @ Id [Max] | Package / Case | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage XPH2R106NC,L1XHQ | 6900 pF | 60 V | Automotive | 170 W, 960 mW | N-Channel | 2.1 mOhm | 110 A | 175 °C | 8-SOP Advance (5x5) | 104 nC | 20 V | AEC-Q101 | Surface Mount | 2.5 V | 8-PowerVDFN | MOSFET (Metal Oxide) |