XPH2R106 Series

Catalog

MOSFET N-CH 60V 110A 8SOP

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Grade	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Qualification	Mounting Type	Vgs(th) (Max) @ Id [Max]	Package / Case	Technology
Toshiba Semiconductor and Storage XPH2R106NC,L1XHQ	6900 pF	60 V	Automotive	170 W 960 mW	N-Channel	2.1 mOhm	110 A	175 °C	8-SOP Advance (5x5)	104 nC	20 V	AEC-Q101	Surface Mount	2.5 V	8-PowerVDFN	MOSFET (Metal Oxide)