OPTIMOS™ 3 N-CHANNEL POWER MOSFET 60 V ; I2PAK TO-262 PACKAGE; 4 MOHM;
| Part | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Rds On (Max) @ Id, Vgs | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Technology | Mounting Type | FET Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 60 V | 10 V | 11000 pF | 4 V | PG-TO262-3 | 98 nC | I2PAK TO-262-3 Long Leads TO-262AA | 4 mOhm | 20 V | -55 °C | 175 ░C | 90 A | MOSFET (Metal Oxide) | Through Hole | N-Channel | 188 W |