IC FLASH 4GBIT PARALLEL 48TSOP
| Part | Memory Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Mounting Type | Memory Size | Package / Case | Package / Case [y] | Package / Case [y] | Technology | Memory Format | Memory Organization | Supplier Device Package | Memory Interface | Operating Temperature [Max] | Operating Temperature [Min] | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Non-Volatile | 2.7 V | 3.6 V | Surface Mount | 512 kb | 48-TFSOP | 18.4 mm | 0.724 in | FLASH - NAND | FLASH | 512 M | 48-TSOP | Parallel | 85 °C | -40 °C | 25 ns |
Infineon Technologies | Non-Volatile | 2.7 V | 3.6 V | Surface Mount | 512 kb | 63-VFBGA | FLASH - NAND | FLASH | 512 M | 63-BGA (11x9) | Parallel | 85 °C | -40 °C | 25 ns | ||
Infineon Technologies | Non-Volatile | 2.7 V | 3.6 V | Surface Mount | 512 kb | 63-VFBGA | FLASH - NAND | FLASH | 512 M | 63-BGA (11x9) | Parallel | 85 °C | -40 °C | 25 ns | ||
Infineon Technologies | Non-Volatile | 2.7 V | 3.6 V | Surface Mount | 512 kb | 48-TFSOP | 18.4 mm | 0.724 in | FLASH - NAND | FLASH | 512 M | 48-TSOP | Parallel | 85 °C | -40 °C | 25 ns |
Infineon Technologies | Non-Volatile | 2.7 V | 3.6 V | Surface Mount | 512 kb | 63-VFBGA | FLASH - NAND | FLASH | 256 M | 63-BGA (11x9) | Parallel | 105 °C | -40 °C | 25 ns | ||
Infineon Technologies | Non-Volatile | 2.7 V | 3.6 V | Surface Mount | 512 kb | 63-VFBGA | FLASH - NAND | FLASH | 256 M | 63-BGA (11x9) | Parallel | 105 °C | -40 °C | 25 ns | ||
Infineon Technologies | Non-Volatile | 2.7 V | 3.6 V | Surface Mount | 512 kb | 48-TFSOP | 18.4 mm | 0.724 in | FLASH - NAND | FLASH | 512 M | 48-TSOP | Parallel | 105 °C | -40 °C | 25 ns |