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IR MOSFET™ N-CHANNEL MOSFET ; I2PAK TO-262 PACKAGE; 4.3 MOHM;
| Part | Technology | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs(th) (Max) @ Id | Vgs (Max) | Supplier Device Package | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 100 V | 4.5 V 10 V | Through Hole | 2.5 V | 16 V | TO-262 | 370 W | -55 °C | 175 ░C | I2PAK TO-262-3 Long Leads TO-262AA | 180 A | 11360 pF | N-Channel | 4.3 mOhm |