RQ3E100 Series | Rohm Semiconductor | Zenode.ai

Catalog

Pch -30V -31A Power MOSFET

Part	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max)	FET Type	Vgs (Max)	Technology	Package Length	Package Name	Package Width	Gate Charge (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Operating Temperature	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)
Rohm Semiconductor RQ3E100ATTB	11.4 mOhm	10 V	4.5 V	30 V	Surface Mount	2.5 V	P-Channel	20 V	MOSFET (Metal Oxide)	3.2 mm	8-HSMT	3 mm	42 nC	8-PowerVDFN	1900 pF	150 °C	2 W	31 A	10 A
Rohm Semiconductor RQ3E100BNTB	10.4 mOhm	10 V	4.5 V	30 V	Surface Mount	2.5 V	N-Channel	20 V	MOSFET (Metal Oxide)	3.2 mm	8-HSMT	3 mm	22 nC	8-PowerVDFN	1100 pF	150 °C	2 W		10 A
Rohm Semiconductor RQ3E100BNTB1	10.4 mOhm	10 V	4.5 V	30 V	Surface Mount	2.5 V	N-Channel	20 V	MOSFET (Metal Oxide)	3.2 mm	8-HSMT	3 mm	22 nC	8-PowerVDFN	1100 pF	150 °C	2 W 15 W	21 A	10 A