Beta
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DIODE GEN PURP 600V 1A M-FLAT
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Package / Case | Current - Reverse Leakage @ Vr | Technology | Voltage - Forward (Vf) (Max) @ If | Speed | Speed | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | -40 °C | M-FLAT (2.4x3.8) | SOD-128 | 50 µA | Standard | 2 V | Standard Recovery >500ns | 200 mA | 1 A | 600 V | Surface Mount |