DMN2041UFDB Series

Dual N-Channel Enhancement Mode MOSFET

Catalog

Dual N-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Configuration	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]
Diodes Inc DMN2041UFDB-13	4.7 A	2 N-Channel (Dual)	20 V	MOSFET (Metal Oxide)	713 pF	1.4 V	-55 °C	150 °C	15 nC	1.4 W	40 mOhm	Surface Mount	U-DFN2020-6 (Type B)	6-UDFN Exposed Pad
Diodes Inc DMN2041UFDB-7	4.7 A	2 N-Channel (Dual)	20 V	MOSFET (Metal Oxide)	713 pF	1.4 V	-55 °C	150 °C	15 nC	1.4 W	40 mOhm	Surface Mount	U-DFN2020-6 (Type B)	6-UDFN Exposed Pad
Diodes Inc DMN2041UVT-13	5.8 A	2 N-Channel (Dual)	20 V	MOSFET (Metal Oxide)		900 mV	-55 °C	150 °C	9.1 nC	1.1 W	28 mOhm	Surface Mount		SOT-23-6 Thin TSOT-23-6	689 pF
Diodes Inc DMN2041UVT-7	5.8 A	2 N-Channel (Dual)	20 V	MOSFET (Metal Oxide)		900 mV	-55 °C	150 °C	9.1 nC	1.1 W	28 mOhm	Surface Mount		SOT-23-6 Thin TSOT-23-6	689 pF

Catalog

Dual N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, andmanufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.

• https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.