DMP3036SFG Series

30V P-Channel Enhancement Mode MOSFET

Catalog

30V P-Channel Enhancement Mode MOSFET

Part	Package / Case	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case [y]	Package / Case [x]	Power Dissipation (Max)
Diodes Inc DMP3036SFG-13	8-PowerVDFN	P-Channel	2.5 V	8.7 A	1931 pF	950 mW	Surface Mount	16.5 nC	MOSFET (Metal Oxide)	20 mOhm	POWERDI3333-8	10 V	5 V	25 V	-55 °C	150 °C	30 V
Diodes Inc DMP3036SFG-7	8-PowerVDFN	P-Channel	2.5 V	8.7 A	1931 pF	950 mW	Surface Mount	16.5 nC	MOSFET (Metal Oxide)	20 mOhm	POWERDI3333-8	10 V	5 V	25 V	-55 °C	150 °C	30 V
Diodes Inc DMP3036SSS-13	8-SOIC	P-Channel	3 V	19.5 A	1931 pF		Surface Mount	16.5 nC	MOSFET (Metal Oxide)	20 mOhm	8-SO	10 V	5 V	25 V	-55 °C	150 °C	30 V	3.9 mm	0.154 in	1.4 W

Catalog

30V P-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON)– ensures on state losses are minimized.

• Small form factor thermally efficient package enables higher density end products.

• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found athttps://www.diodes.com/products/automotive/automotiveproducts/.

• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.