IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 42 MOHM;
| Part | Rds On (Max) @ Id, Vgs | Technology | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Supplier Device Package | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 42 mOhm | MOSFET (Metal Oxide) | 144 W | -55 °C | 175 ░C | 150 V | 20 V | 33 A | N-Channel | D2PAK | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 40 nC | 1750 pF | Surface Mount | 5 V | 10 V |