TSM7N90 Series

Catalog

MOSFET N-CH 900V 7A ITO220AB

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology
Taiwan Semiconductor Corporation TSM7N90CI C0G	1.9 Ohm	ITO-220AB	10 V 49 nC	900 V	40.3 W	1969 pF	10 V	7 A	N-Channel	TO-220-3 Full Pack Isolated Tab	Through Hole	4 V	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM7N90CZ C0G	1.9 Ohm	TO-220	10 V 49 nC	900 V	40.3 W	1969 pF	10 V	7 A	N-Channel	TO-220-3	Through Hole	4 V	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)