Beta
⌘K
DIODE GEN PURP 200V 3A L-FLAT
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Current - Reverse Leakage @ Vr | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Technology | Package / Case | Supplier Device Package | Reverse Recovery Time (trr) | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | -40 °C | 200 V | 200 mA 500 ns | 10 µA | Surface Mount | 980 mV | Standard | L-FLAT™ | L-FLAT™ (4x5.5) | 35 ns | 3 A |